Improvement of RF and Noise Characteristics Using a Cavity Structure in InAlAs/InGaAs HEMTs

Author

Takahashi, Tsuyoshi ; Sato, Masaru ; Nakasha, Yasuhiro ; Hirose, Tatsuya ; Hara, Naoki

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

59

Issue

8

fYear

2012

Firstpage

2136

Lastpage

2141

Abstract

Reduction of parasitic capacitance in the gate region by adopting a cavity structure improved the high-frequency and noise characteristics of InAlAs/InGaAs high-electron mobility transistors (HEMTs). We achieved a high cutoff frequency f_T of 517 GHz and a minimum noise figure NF_min of 0.71 dB at 94 GHz even after passivation and interconnection process. Scaling of the gate-to-channel distance and gate-recess length is also effective in enhancing transconductance g_m to improve f_T and NF_min. The cavity structure is a promising candidate that can help in achieving high-performance millimeter-wave monolithic integrated circuits with multilayer interconnections.

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; interconnections; millimetre wave field effect transistors; passivation; submillimetre wave transistors; HEMT; InAlAs-InGaAs; RF characteristic; cavity structure; frequency 517 GHz; frequency 94 GHz; gate region; gate-recess length; gate-to-channel distance; high electron mobility transistor; interconnection process; millimeter wave monolithic integrated circuits; multilayer interconnectio; noise characteristic; noise figure 0.71 dB; parasitic capacitance reduction; passivation process; transconductance; Cavity resonators; HEMTs; Logic gates; MODFETs; Noise; Parasitic capacitance; Resistance; Cavity; cutoff frequency; high-electron mobility transistor (HEMT); noise figure; parasitic capacitance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2200254

Filename

6216405