Title :
Improvement of RF and Noise Characteristics Using a Cavity Structure in InAlAs/InGaAs HEMTs
Author :
Takahashi, Tsuyoshi ; Sato, Masaru ; Nakasha, Yasuhiro ; Hirose, Tatsuya ; Hara, Naoki
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Reduction of parasitic capacitance in the gate region by adopting a cavity structure improved the high-frequency and noise characteristics of InAlAs/InGaAs high-electron mobility transistors (HEMTs). We achieved a high cutoff frequency fT of 517 GHz and a minimum noise figure NFmin of 0.71 dB at 94 GHz even after passivation and interconnection process. Scaling of the gate-to-channel distance and gate-recess length is also effective in enhancing transconductance gm to improve fT and NFmin. The cavity structure is a promising candidate that can help in achieving high-performance millimeter-wave monolithic integrated circuits with multilayer interconnections.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; interconnections; millimetre wave field effect transistors; passivation; submillimetre wave transistors; HEMT; InAlAs-InGaAs; RF characteristic; cavity structure; frequency 517 GHz; frequency 94 GHz; gate region; gate-recess length; gate-to-channel distance; high electron mobility transistor; interconnection process; millimeter wave monolithic integrated circuits; multilayer interconnectio; noise characteristic; noise figure 0.71 dB; parasitic capacitance reduction; passivation process; transconductance; Cavity resonators; HEMTs; Logic gates; MODFETs; Noise; Parasitic capacitance; Resistance; Cavity; cutoff frequency; high-electron mobility transistor (HEMT); noise figure; parasitic capacitance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2200254
