Title :
Characterisation of coplanar waveguide on epitaxial layers
Author :
Williams, D.F. ; Belquin, J.M. ; Spisser, A. ; Cappy, A. ; Dambrine, G.
Author_Institution :
Nat. Inst. of Stand. & Technol., Boulder, CO, USA
fDate :
8/14/1997 12:00:00 AM
Abstract :
The effect of thin AlInAs-GaInAs epitaxial layers on the propagation of electrical signals in coplanar waveguide transmission lines fabricated on semi-insulating indium phosphide substrates is examined. It is shown that argon isolation implants effectively reduce conduction losses in these layers to negligible levels at radio, microwave, and millimetre-wave frequencies
Keywords :
aluminium compounds; coplanar waveguides; gallium arsenide; indium compounds; ion implantation; losses; semiconductor epitaxial layers; AlInAs-GaInAs epitaxial layers; AlInAs-GaInAs-InP; Ar isolation implants; CPW transmission lines; InP; conduction losses; coplanar waveguide; electrical signal propagation; epitaxial layers; microwave frequencies; millimetre-wave frequencies; radiowave frequencies; semiinsulating InP substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970969
