• DocumentCode
    1538415
  • Title

    Modeling of modulation-doped multiple-quantum-well structures in applied electric fields using the transfer-matrix technique

  • Author

    Sugg, A.R. ; Leburton, Jean-Pierre C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana-Champaign, IL, USA
  • Volume
    27
  • Issue
    2
  • fYear
    1991
  • fDate
    2/1/1991 12:00:00 AM
  • Firstpage
    224
  • Lastpage
    231
  • Abstract
    Modulation-doped and intrinsic multiple-quantum-well (MQW) structures under applied electric fields are investigated using the transfer-matrix technique (TMT). A method for locating quasi-eigenvalue energies is introduced and compared to traditional techniques on the basis of the occupation probability and transmission coefficient. Electron and heavy-hole energy quasi-eigenvalues and wave functions are calculated for modulation-doped and intrinsic quantum wells. The upper subbands of the two cases are found to vary significantly from one another in the presence of applied electric fields. The TMT is demonstrated to be a versatile method for modeling MQW structures under linear and nonlinear electric fields
  • Keywords
    modelling; semiconductor quantum wells; applied electric fields; heavy-hole energy quasi-eigenvalues; intrinsic quantum wells; modelling; modulation-doped multiple-quantum-well structures; occupation probability; quasi-eigenvalue energies; transfer-matrix technique; transmission coefficient; upper subbands; wave functions; Chemical compounds; Effective mass; Eigenvalues and eigenfunctions; Electrons; Epitaxial layers; Equations; Molecular beam epitaxial growth; Quantum well devices; Semiconductor process modeling; Wave functions;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.78223
  • Filename
    78223