Title :
Model for the potential drop in the silicon substrate for thin-film SOI MOSFETs
Author :
Martino, Joao Antonio ; Lauwers, L. ; Colinge, J.P. ; De Meyer, K.
Author_Institution :
Imec, Leuven, Belgium
Abstract :
An analytical model is proposed for calculating the potential drop in the silicon substrate for thin-film SOI MOSFETs. The model is verified by numerical simulation, and indicates that the substrate potential causes a nonlinear shift of the threshold voltage for varying back gate voltages. Although this shift is shown to be rather limited for SOI fabrication parameters, it will increase if thinner buried oxides are used in the future.
Keywords :
digital simulation; elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; substrates; Si; analytical model; back gate voltages; nonlinear shift; numerical simulation; potential drop; substrate potential; thin film SOI MOSFET; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900938
