Title :
Multiple-quantum-well asymmetric Fabry-Perot modulators for microwave photonic applications
Author :
Killey, R.I. ; Liu, C.P. ; Whitehead, M. ; Stavrinou, P. ; Song, J.B. ; Chadha, J.S. ; Wake, D. ; Button, C.C. ; Parry, G. ; Seeds, A.J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
fDate :
10/1/2001 12:00:00 AM
Abstract :
We describe the development of InGaAsP multiquantum-well asymmetric Fabry-Perot modulators (AFPM) for RF-over-fiber applications. Advantages of the AFPM include low drive voltage and loss, high linearity and simple fiber alignment. Experimental results of initial devices, exhibiting 5.5-dB modulation depth and >3-GHz operation, are described. The effect of the optical power on the device performance was assessed, and the modulation bandwidth was found to be unaffected by incident optical powers up to 0 dBm. The linearity of the modulation characteristic was measured by carrying out two-tone intermodulation distortion tests, and a third-order intercept point of 30 dBm was observed
Keywords :
Fabry-Perot resonators; III-V semiconductors; electro-optical modulation; gallium arsenide; indium compounds; intermodulation distortion; microwave photonics; optical fibre communication; quantum well devices; InGaAsP; RF-over-fiber applications; drive voltage; fiber alignment; incident optical powers; microwave photonic applications; modulation bandwidth; modulation characteristic; modulation depth; multiple-quantum-well asymmetric Fabry-Perot modulators; third-order intercept point; two-tone intermodulation distortion tests; Bandwidth; Fabry-Perot; Linearity; Low voltage; Optical devices; Optical distortion; Optical fiber devices; Optical fiber losses; Optical modulation; Quantum well devices;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
