Design of narrow-band photoreceivers by means of the photodiode intrinsic conductance

Author

Leven, Andreas ; Hurm, Volker ; Reuter, Ralf ; Rosenzweig, Josef

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

Volume

49

Issue

10

fYear

2001

fDate

10/1/2001 12:00:00 AM

Firstpage

1908

Lastpage

1913

Abstract

The photodiode intrinsic conductance is a versatile parameter for designing photoreceivers used in lightwave-microwave systems. A short review is given on how the transimpedance and equivalent input noise current of an optical receiver can be calculated. The design of monolithically integrated narrow-band photoreceivers for microwave-via-fiber applications at 10 GHz is demonstrated. The photoreceivers were fabricated using GaAs-based pseudomorphic high electron-mobility transistor monolithically integrated with metamorphic InGaAs photodiodes. For such a photoreceiver, a very low equivalent input noise current of 5.7 pA per square-root hertz and a high optoelectronic conversion gain of 64.1 dBV/W were measured in good agreement with simulations

Keywords

HEMT integrated circuits; integrated circuit noise; integrated optoelectronics; microwave photonics; optical fibre communication; optical receivers; photodiodes; 10 GHz; equivalent input noise current; lightwave-microwave systems; metamorphic InGaAs photodiodes; microwave-via-fiber applications; narrow-band photoreceivers; optical receiver; optoelectronic conversion gain; photodiode intrinsic conductance; pseudomorphic high electron-mobility transistor; transimpedance; Current measurement; Gain measurement; Indium gallium arsenide; Microwave transistors; Narrowband; Noise measurement; Optical noise; Optical receivers; PHEMTs; Photodiodes;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.954806

Filename

954806