Title :
Improvement of electroluminescence characteristics of porous silicon LED by using amorphous silicon layers
Author :
Chen, Yen-Ann ; Liang, Nai-Yuan ; Laih, Li-Hong ; Tsay, Wen-Chin ; Chang, Mao-Nan ; Hong, Jyh-Wong
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
8/14/1997 12:00:00 AM
Abstract :
Amorphous silicon (a-Si:H) layers are used to improve the injection current density J and threshold voltage Vth of porous silicon light emitting diodes (PS-LEDs). A PS-LED with n-i-n-p-n a-Si:H layers is shown to have a substantially (>6 orders of magnitude) higher J than that of the PS-LED without any a-Si:H layers. In addition, a lower Vth of 4.2 V and a higher brightness B of: 20.5 cd/m2 at J=600 mA/cm2 are achieved as compared to other PS-LEDs with n-i-p-n a-Si:H layers
Keywords :
electroluminescence; 4.2 V; LED; Si:H; brightness; electroluminescence characteristics; injection current density; n-i-n-p-n layers; porous semiconductors; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970994
