• DocumentCode
    1538962
  • Title

    Improvement of electroluminescence characteristics of porous silicon LED by using amorphous silicon layers

  • Author

    Chen, Yen-Ann ; Liang, Nai-Yuan ; Laih, Li-Hong ; Tsay, Wen-Chin ; Chang, Mao-Nan ; Hong, Jyh-Wong

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
  • Volume
    33
  • Issue
    17
  • fYear
    1997
  • fDate
    8/14/1997 12:00:00 AM
  • Firstpage
    1489
  • Lastpage
    1490
  • Abstract
    Amorphous silicon (a-Si:H) layers are used to improve the injection current density J and threshold voltage Vth of porous silicon light emitting diodes (PS-LEDs). A PS-LED with n-i-n-p-n a-Si:H layers is shown to have a substantially (>6 orders of magnitude) higher J than that of the PS-LED without any a-Si:H layers. In addition, a lower Vth of 4.2 V and a higher brightness B of: 20.5 cd/m2 at J=600 mA/cm2 are achieved as compared to other PS-LEDs with n-i-p-n a-Si:H layers
  • Keywords
    electroluminescence; 4.2 V; LED; Si:H; brightness; electroluminescence characteristics; injection current density; n-i-n-p-n layers; porous semiconductors; threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970994
  • Filename
    621657
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1538962