• DocumentCode
    1538974
  • Title

    High-reliability flip-chip GaInAs/InP pin photodiode

  • Author

    Wada, O. ; Kumai, T. ; Hamaguchi, Hiroki ; Makiuchi, M. ; Kuramata, Akito ; Mikawa, T.

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • Volume
    26
  • Issue
    18
  • fYear
    1990
  • Firstpage
    1484
  • Lastpage
    1486
  • Abstract
    Lensed, small-junction, flip-chip GaInAs/InP pin photodiodes were fabricated by introducing planar junction and reliable metallisation structures. Low dark current (<100 pA), high quantum efficiency (80%) with large fibre alignment tolerance (42 mu m) and also large bandwidth (21 GHz) characteristics were achieved. Aging test carried out at 180 degrees C for 3000 h confirmed their high reliability.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; photodiodes; 180 degC; 21 GHz; 80 percent; GaInAs-InP; III-V semiconductors; aging; dark current; flip-chip GaInAs/InP pin photodiode; metallisation structures; planar junction; quantum efficiency; reliability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900953
  • Filename
    58107
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1538974