Title :
Very fast GaAs HEMT analogue switch
Author :
Frounchi, J. ; Harrold, S.
Author_Institution :
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
fDate :
8/14/1997 12:00:00 AM
Abstract :
A novel approach for driving high-speed analogue switches in GaAs FET technology is described. The performance is compared with that of existing switch-driver circuits. By replacing the conventional pull-up device with a source-follower like circuit, a very high speed GaAs HEMT analogue switch-driver with very small area has been designed. This circuit can be used to extend the operating frequency of sampled data integrated circuits
Keywords :
HEMT integrated circuits; III-V semiconductors; driver circuits; field effect analogue integrated circuits; field effect transistor switches; gallium arsenide; sampled data circuits; switching circuits; GaAs; GaAs HEMT switch; high speed switch-driver; high-speed analogue switches; sampled data integrated circuits; source-follower like circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970974
