DocumentCode
1539005
Title
Very fast GaAs HEMT analogue switch
Author
Frounchi, J. ; Harrold, S.
Author_Institution
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
Volume
33
Issue
17
fYear
1997
fDate
8/14/1997 12:00:00 AM
Firstpage
1499
Lastpage
1501
Abstract
A novel approach for driving high-speed analogue switches in GaAs FET technology is described. The performance is compared with that of existing switch-driver circuits. By replacing the conventional pull-up device with a source-follower like circuit, a very high speed GaAs HEMT analogue switch-driver with very small area has been designed. This circuit can be used to extend the operating frequency of sampled data integrated circuits
Keywords
HEMT integrated circuits; III-V semiconductors; driver circuits; field effect analogue integrated circuits; field effect transistor switches; gallium arsenide; sampled data circuits; switching circuits; GaAs; GaAs HEMT switch; high speed switch-driver; high-speed analogue switches; sampled data integrated circuits; source-follower like circuit;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970974
Filename
621664
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