Title :
An intelligent BiCMOS/DMOS quad 1-A high-side switch
Author :
Hobrecht, Stephen
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
A fully protected quad high-side DMOS switch has been realized using a BiCMOS/DMOS process. A bipolar multiplier cell calculates and limits instantaneous power dissipated by each 0.8-Ω DMOS power switch to 13 W. The integrated circuit shuts down to protect itself if a safe temperature or operating voltage is exceeded. A thermal warning is provided when the junction temperature rises to within 20°C of the shutdown temperature such that an orderly system turn-off occurs. A serial output data pin reports status information including channel on/off, open and shorted load faults, warning and shutdown temperatures, and an overvoltage condition. The circuit withstands a supply voltage of 60 V and operates from 6 to 32 V. The IC can be permanently connected to the power while drawing no DC current in the standby mode. The device fits into a 20-pin dual-in-line package having the die-attach paddle and the center four pins of the lead frame being a continuous strip of metal providing a low thermal resistance path from which to extract heat from the output switches
Keywords :
BIMOS integrated circuits; power integrated circuits; switching circuits; 6 to 32 V; BiCMOS/DMOS process; bipolar multiplier cell; die-attach paddle; dual-in-line package; junction temperature; load faults; operating voltage; overvoltage condition; quad high-side DMOS switch; safe temperature; system turn-off; thermal resistance path; thermal warning; BiCMOS integrated circuits; Bipolar integrated circuits; Circuit faults; Packaging; Pins; Power system protection; Switches; Temperature; Thermal resistance; Voltage control;
Journal_Title :
Solid-State Circuits, IEEE Journal of