Title :
Improving the RF performance of 0.18 μm CMOS with deep n-well implantation
Author :
Jiong-Guang Su ; Heng-Ming Hsu ; Shyh-Chyi Wong ; Chun-Yen Chang ; Tiao-Yuan Huang ; Jack Yuan-Chen Sun
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The radio-frequency (RF) figures of merit of 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology are investigated by evaluating the unity-current-gain cutoff frequency (FT) and maximum oscillation frequency (Fmax). The device fabricated with an added deep n-well structure is shown to greatly enhance both the cutoff frequency and the maximum oscillation frequency, with negligible DC disturbance. Specifically, an 18% increase in FT and 25% increase in Fmax are achieved. Since the deep n-well implant can be easily adopted in a standard CMOS process, the approach appears to be very promising for future CMOS RF applications.
Keywords :
CMOS integrated circuits; UHF integrated circuits; equivalent circuits; integrated circuit modelling; ion implantation; 0.18 micron; CMOS RF applications; MOSFET; RF performance; deep n-well implantation; deep submicron CMOS; maximum oscillation frequency; radiofrequency figures of merit; unity-current-gain cutoff frequency; Annealing; CMOS process; CMOS technology; Cutoff frequency; Implants; MOSFET circuits; Radio frequency; Semiconductor device manufacture; Substrates; Sun;
Journal_Title :
Electron Device Letters, IEEE
