Title :
MOSFET drain/source charge partition under nonquasi-static switching
Author :
Ng, Allen F L ; Lee, Wai-Kit ; Ko, Ping K. ; Chan, Mansun
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
The channel charge partition of metal-oxide-semiconductor transistors in nonquasi-static switching has been studied. A new approach, with the help of a two-dimensional device simulator is used to separate the direct current and transient current component during device switching. Unlike the commonly accepted 40/60 drain/source channel charge partition ratio, our results show that it is closer to the 0/100 as long as the switch speed is higher than the channel charging time. The result is important for pass-gate type circuits to evaluate the amount of charge transferred to the source and drain nodes.
Keywords :
MOSFET; electric charge; field effect transistor switches; semiconductor device models; 2D device simulator; MOS transistors; MOSFET; channel charge partition; channel charging time; device switching; direct current component; drain/source charge partition; nonquasi-static switching; pass-gate type circuits; switch speed; transient current component; two-dimensional device simulator; Analytical models; Closed-form solution; Councils; FETs; MOSFET circuits; Switches; Switching circuits; Transient analysis; Two dimensional displays; Voltage;
Journal_Title :
Electron Device Letters, IEEE
