Title :
Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates
Author :
Ragnarsson, L-Å ; Guha, S. ; Bojarczuk, N.A. ; Cartier, E. ; Fischetti, M.V. ; Rim, K. ; Karasinski, J.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
High-effective mobilities are demonstrated in Al/sub 2/O/sub 3/ based n-channel MOSFETs with Al gates. The Al/sub 2/O/sub 3/ was grown in ultra-high vacuum using a reactive atomic beam deposition system. The mobility with maximum values at approximately 270 cm/sup 2//Vs, is found to approach that of SiO/sub 2/ based MOSFETs at higher fields.
Keywords :
MOSFET; alumina; aluminium; carrier mobility; dielectric thin films; leakage currents; semiconductor device measurement; vacuum deposited coatings; Al; Al gates; Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/ gate dielectric; Al/sub 2/O/sub 3/ n-MOSFETs; electrical characterization; high-effective mobilities; leakage current reduction; n-channel MOSFETs; reactive atomic beam deposition system; ultra-high vacuum deposition; Aluminum; Atomic beams; CMOS technology; Capacitance; Current measurement; Dielectric substrates; Hafnium; MOSFETs; Temperature; Voltage;
Journal_Title :
Electron Device Letters, IEEE
