DocumentCode :
1539059
Title :
Low phase noise V-band push-push voltage controlled oscillator using 0.15 μm GaAs pseudomorphic high electron-mobility transistor technology
Author :
Kao, Hsuan-Ling ; Shih, S.P. ; Yeh, C.S.
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Volume :
6
Issue :
6
fYear :
2012
Firstpage :
653
Lastpage :
657
Abstract :
A low phase noise, low dissipated power and small-size V-band voltage-controlled oscillator (VCO) using dual cross-coupled pair configuration, capacitance-splitting technique and push-push topology is presented. The V-band VCO circuit uses 0.15 μm GaAs pseudomorphic high electron-mobility transistor technology. The VCO has low phase noise, of -108.43-dBc/Hz, at a 1-MHz offset from a 62-GHz carrier and can be tuned from 61.11 to 62.66-GHz. The figure of merit is -190.45-dBc/Hz. The power consumption of the VCO with 1.04-mm2 chip area is 24 mW, from a 1 V power supply.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; low-power electronics; millimetre wave oscillators; phase noise; voltage-controlled oscillators; GaAs; GaAs pseudomorphic high electron-mobility transistor; V-band VCO circuit; capacitance-splitting; dual cross-coupled pair configuration; frequency 61.11 GHz to 62.66 GHz; low dissipated power; low phase noise; power consumption; push-push topology; size 0.15 mum; voltage 1 V; voltage controlled oscillator;
fLanguage :
English
Journal_Title :
Microwaves, Antennas & Propagation, IET
Publisher :
iet
ISSN :
1751-8725
Type :
jour
DOI :
10.1049/iet-map.2011.0348
Filename :
6216725
Link To Document :
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