Title :
A vortex transitional memory cell for 1-Mbit/cm/sup 2/ density Josephson RAMs
Author :
Numata, H. ; Nagasawa, S. ; Tahara, S.
Author_Institution :
Fundamental Res. Labs., NEC Corp., Ibaraki, Japan
fDate :
6/1/1997 12:00:00 AM
Abstract :
We developed an 8.5 /spl mu/m/spl times/11.5 /spl mu/m vortex transitional (VT) memory cell. The memory cell is the smallest Josephson memory cell ever reported. The cell was fabricated by electron cyclotron resonance plasma etching and bias-sputtering planarization. This is also the first Josephson circuit fabricated with sub-micron minimum feature size. Proper nondestructive read-out operation was verified even after half-selected conditions. An operating margin of /spl plusmn/14% was obtained for control currents I/sub X/ and I/sub Y/. These results are promising for developing a 1-Mbit/cm/sup 2/ density Josephson RAM.
Keywords :
nondestructive readout; random-access storage; sputter etching; sputtering; superconducting memory circuits; Josephson RAM; bias-sputtering planarization; electron cyclotron resonance plasma etching; fabrication; nondestructive read-out; vortex transitional memory cell; Insulation; Niobium; Plasma sources; Random access memory; Read-write memory; Sputter etching; Sputtering; Sulfur hexafluoride; Superconducting integrated circuits; Wiring;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
