Title :
Highly reliable thin nitrided SiO2 films formed by rapid thermal processing in an N2O ambient
Author :
Fukuda, H. ; Arakawa, T. ; Ohno, S.
Author_Institution :
Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
Nitridation of a thin SiO2 film has been achieved by rapid thermal processing (RTP) using only O2 and N2O as reactants. In comparison with pure SiO2 film, nitrided SiO2 (SiOxNy) film (8 nm), which includes about 5 at.% nitrogen at the SiOxNy/Si interface, showed a large charge-to-breakdown value greater than 30 C/cm2 and a density of electron traps lower than that of SiO2 in high-field stressing (> 8 MV/cm) under the condition of gate negatively biased.
Keywords :
heat treatment; insulating thin films; metal-insulator-semiconductor structures; semiconductor technology; silicon compounds; surface hardening; MOS structure; N 2O; SiO xN y-Si; charge-to-breakdown value; dielectric reliability; electron traps; heat treatment; high-field stressing; rapid thermal processing; thin SiO 2 film;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900966
