DocumentCode :
1539317
Title :
IC compatible planar inductors on silicon
Author :
Ronkainen, H. ; Kattelus, H. ; Rvainen, E. Ta ; Ruhisaari, T. ; Andersson, M. ; Kuivalainen, P.
Author_Institution :
VTT Electron., Finland
Volume :
144
Issue :
1
fYear :
1997
fDate :
2/1/1997 12:00:00 AM
Firstpage :
29
Lastpage :
35
Abstract :
The authors present a systematic study of the modelling, design, and fabrication of planar spiral inductors implemented in a high speed 0.8 μm BiCMOS technology, and characterised for use in portable VHF applications, Both a fully empirical distributed equivalent circuit model and a more accurate semiempirical model for the integrated inductors have been developed and tested. The latter broadband model is scalable and thus applicable also for inductor design. The IC compatible inductors on silicon were fabricated using a process featuring oxide isolation and two layers of metal. For comparison, some test inductors were also fabricated using nonstandard techniques such as 4 μm thick oxides and 4 μm thick Al metallisation. The rectangular spiral inductors showed larger Q values than the octagonal ones. The largest Q value measured was 16. As expected, this value was obtained by using a combination of thick oxide and thick metallisation. The results are encouraging for the use of integrated inductors in silicon RF ICs in the GHz frequency range
Keywords :
BiCMOS integrated circuits; Q-factor; SPICE; elemental semiconductors; equivalent circuits; inductors; integrated circuit design; integrated circuit modelling; microwave integrated circuits; silicon; 0.8 mum; 3 GHz; Al metallisation; BiCMOS technology; GHz frequency range; IC compatible planar inductors; Q values; Si; Si RF IC; broadband model; design; empirical distributed equivalent circuit model; fabrication; inductor design; integrated inductors; modelling; nonstandard techniques; octagonal inductors; oxide isolation; planar spiral inductors; portable VHF applications; rectangular spiral inductors; semiempirical model; test inductors;
fLanguage :
English
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2409
Type :
jour
DOI :
10.1049/ip-cds:19970748
Filename :
581235
Link To Document :
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