Title :
GaAs MESFET large-signal modelling for multiport Volterra series analysis
Author :
Nørholm, N. ; Iversen, C. ; Larsen, T.
Author_Institution :
Inst. of Electron. Syst., Aalborg Univ., Denmark
fDate :
2/1/1997 12:00:00 AM
Abstract :
A new large-signal model of a GaAs MESFET suitable for Volterra series analysis is developed. The nonlinear model includes 14 linear and five two-dimensional nonlinear elements. An offset model is introduced which significantly improves the convergence of the Volterra series. The model is verified through comparison with nonlinear two-tone measurements. Good agreement is obtained for input levels up to about -2 dBm with a bias point close to pinch-off (as in mixer applications) with an eighth order Volterra series analysis. Changes in the DC drain-source current up to 50% can be predicted with good results
Keywords :
III-V semiconductors; MESFET circuits; Schottky gate field effect transistors; Volterra series; equivalent circuits; gallium arsenide; mixers (circuits); multiport networks; nonlinear network analysis; semiconductor device models; DC drain-source current; GaAs; GaAs MESFET; bias point; large-signal modelling; mixer applications; multiport Volterra series analysis; nonlinear model; nonlinear two-tone measurement; offset model; pinch-off; two-dimensional nonlinear elements;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:19970727
