GaAs MESFET large-signal modelling for multiport Volterra series analysis

Author

Nørholm, N. ; Iversen, C. ; Larsen, T.

Author_Institution

Inst. of Electron. Syst., Aalborg Univ., Denmark

Volume

144

Issue

1

fYear

1997

fDate

2/1/1997 12:00:00 AM

Firstpage

40

Lastpage

44

Abstract

A new large-signal model of a GaAs MESFET suitable for Volterra series analysis is developed. The nonlinear model includes 14 linear and five two-dimensional nonlinear elements. An offset model is introduced which significantly improves the convergence of the Volterra series. The model is verified through comparison with nonlinear two-tone measurements. Good agreement is obtained for input levels up to about -2 dBm with a bias point close to pinch-off (as in mixer applications) with an eighth order Volterra series analysis. Changes in the DC drain-source current up to 50% can be predicted with good results

Keywords

III-V semiconductors; MESFET circuits; Schottky gate field effect transistors; Volterra series; equivalent circuits; gallium arsenide; mixers (circuits); multiport networks; nonlinear network analysis; semiconductor device models; DC drain-source current; GaAs; GaAs MESFET; bias point; large-signal modelling; mixer applications; multiport Volterra series analysis; nonlinear model; nonlinear two-tone measurement; offset model; pinch-off; two-dimensional nonlinear elements;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:19970727

Filename

581237