Title :
25 GHz dielectric resonator oscillator using an AlGaAs/GaAs HBT
Author :
Ogawa, Koichi ; Ikeda, Hinata ; Ishizaki, Takayuki ; Hashimoto, Koji ; Ota, Yoshiharu
Author_Institution :
Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
The design and performance of a dielectric resonator oscillator (DRO) using a heterojunction bipolar transistor (HBT) operating in the K-band frequency are described. The oscillator was fabricated in microstrip integrated circuit (MIC) on an aluminium substrate. The device used was an AlGaAs/GaAs HBT with an n+-GaAlAs cap layer fabricated through a one-mask multiple self-alignment process. The oscillator showed an output power of 11.8 dBm with a DC-to-RF efficiency of 15.8%, and the phase noise of -78 dBc/Hz at 10 kHz off carrier which was 8 dB better than that of a GaAs FET oscillator implemented on an identical circuit.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; dielectric resonators; gallium arsenide; microwave oscillators; p-n heterojunctions; strip lines; 10 kHz; 15.8 percent; 25 GHz; Al; AlGaAs-GaAs; DC-to-RF efficiency; K-band frequency; dielectric resonator oscillator; heterojunction bipolar transistor; microstrip integrated circuit; microwave oscillator; one-mask multiple self-alignment process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900972
