DocumentCode
1539367
Title
Investigation of the Packaging-Induced RF Attenuations and Resonances in a Broadband Optoelectronic Modulator Module
Author
Han, Wei ; Rensing, Marc ; Wang, Xin ; Yang, Hua ; Peters, Frank H. ; O´Brien, Peter
Author_Institution
Integrated Photonics Group, Tyndall Nat. Inst., Cork, Ireland
Volume
30
Issue
16
fYear
2012
Firstpage
2610
Lastpage
2617
Abstract
In this paper, the influence of packaging-induced RF signal degradation on an optoelectronic modulator module is investigated. A directly modulated laser (DML) is modeled and packaged in a butterfly-type package. A distributed 3-D electromagnetic model is built based on this laser module. In the packaging assembly procedure, impedance mismatching and ground discontinuity on microwave transmission will cause unwanted signal decays and resonances. We specify the RF degradation in three regions: 1) the RF connector, 2) the RF substrate, and 3) the mode transition region between the optoelectronic subsystem and the package. The RF transmission characteristics in these regions are extracted and analyzed in detail. The results indicate that by optimizing the packaging design, strong resonances and signal decays can be eliminated or compensated over a wide frequency range. The measured scattering parameters show that the proposed packaging assembly has a resonance-free bandwidth of 31.2 GHz, and the DML module exhibits a wide 3 dB bandwidth of 15.1 GHz.
Keywords
integrated circuit packaging; integrated optoelectronics; microwave photonics; modulators; DML module; RF connector; RF degradation; RF substrate; RF transmission characteristics; bandwidth 15.1 GHz; bandwidth 31.2 GHz; broadband optoelectronic modulator module; butterfly-type package; directly modulated laser; distributed 3D electromagnetic model; ground discontinuity; impedance mismatching; laser module; microwave transmission; mode transition region; optoelectronic subsystem; packaging assembly procedure; packaging design; packaging-induced RF attenuations; packaging-induced RF signal degradation; resonance-free bandwidth; scattering parameters; unwanted signal decays; Assembly; Connectors; Integrated circuit modeling; Laser modes; Measurement by laser beam; Packaging; Radio frequency; Equivalent circuit model; microwave packaging technologies; optoelectronic modulators; scattering parameters; semiconductor lasers;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/JLT.2012.2204727
Filename
6217264
Link To Document