• DocumentCode
    1539433
  • Title

    Kink effect, transconductance increase and field enhanced electron emission in AlGaAs/GaAs HEMTs

  • Author

    Canali, Carlo ; Tedesco, C. ; Zanoni, Enrico ; Castellaneta, C. ; Magistrali, F. ; Sangalli, M.

  • Author_Institution
    Dipartimento di Elettronica de Inf., Padova Univ., Italy
  • Volume
    26
  • Issue
    18
  • fYear
    1990
  • Firstpage
    1520
  • Lastpage
    1522
  • Abstract
    Experimental results obtained in depletion AlGaAs/GaAs HEMTs showing the presence of a remarkable increase of transconductance with frequency associated with a kink effect in the current-voltage curves is reported. Transconductance increase occurs at high frequencies with increasing drain source voltage. All these effects are ascribed to field enhanced electron emission from deep levels present in the AlGaAs layer.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; AlGaAs-GaAs; HEMT; current-voltage curves; drain source voltage; field enhanced electron emission; kink effect; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900976
  • Filename
    58130
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1539433