Turn-off behaviour of epitaxial planar and trench gate IGBTs and nonepitaxial planar gate IGBT under hard and soft switchings

Author

Iwamoto, H. ; Kondo, H. ; Yu, Y. ; Kawakami, A. ; Nakaoka, M.

Author_Institution

Power Device Div., Mitsubishi Electr. Corp., Fukuoka, Japan

Volume

148

Issue

5

fYear

2001

fDate

9/1/2001 12:00:00 AM

Firstpage

443

Lastpage

448

Abstract

The results of investigation on turn-off dynamic operations of IGBTs are presented in the paper. Three-types of IGBTs which have planar and trench gate structures by epitaxial wafer and planar gate structure by nonepitaxial wafer are compared under conditions of hard and soft switching commutation topologies. Collector-emitter voltage and collector current waveforms of each IGBT and power losses are analysed under conditions of various parameters through simulation and in experiment. Moreover, carrier behaviour, electric field and potential distributions inside the chips are studied by simulation technique. It is noted that the trench gate IGBT has an advantage over the other-types for the hard switching application from the point of view of switching losses, and both the planar and trench gate IGBTs on the basis of an epitaxial wafer are more suitable for soft switching applications because of lower switching and on-state losses

Keywords

bipolar transistor switches; commutation; electric fields; field effect transistor switches; insulated gate bipolar transistors; isolation technology; losses; power semiconductor switches; semiconductor epitaxial layers; carrier behaviour; collector current waveforms; collector-emitter voltage waveforms; commutation; electric field; epitaxial planar gate IGBT; epitaxial wafer; hard switching; nonepitaxial planar gate IGBT; nonepitaxial wafer; potential distributions; power losses; soft switching; switching losses; trench gate IGBT; turn-off behaviour; turn-off dynamic operations;

fLanguage

English

Journal_Title

Electric Power Applications, IEE Proceedings -

Publisher

iet

ISSN

1350-2352

Type

jour

DOI

10.1049/ip-epa:20010487

Filename

955380