DocumentCode :
1539447
Title :
4.6-W Single Frequency Semiconductor Disk Laser With 
Linewidth
Author :
Rantamäki, Antti ; Chamorovskiy, Alexander ; Lyytikäinen, Jari ; Okhotnikov, Oleg
Author_Institution :
Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland
Volume :
24
Issue :
16
fYear :
2012
Firstpage :
1378
Lastpage :
1380
Abstract :
We report on a single frequency semiconductor disk laser producing 4.6 W of output power with the free-running linewidth of <;75 kHz derived from delayed self-heterodyne measurements. The implementation of the flip-chip gain design allows for considerable power scaling with good beam quality and high spectral purity.
Keywords :
laser beams; semiconductor lasers; beam quality; delayed self-heterodyne measurements; flip-chip gain design; free-running linewidth; power 4.6 W; power scaling; single frequency semiconductor disk laser; spectral purity; Measurement by laser beam; Optimized production technology; Power lasers; Pump lasers; Vertical cavity surface emitting lasers; Molecular beam epitaxy; quantum well; semiconductor disk laser;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2012.2204736
Filename :
6217278
Link To Document :
