Title :
Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region
Author :
Zarea, A ; Sellai, A ; Raven, M S ; Steenson, D.P. ; Chamberlain, J.M. ; Henini, M. ; Hughes, 0.H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Nottingham Univ., UK
Abstract :
The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, Rs, C and L associated with the device structure.
Keywords :
III-V semiconductors; aluminium compounds; electric impedance measurement; gallium arsenide; tunnel diodes; DC bias; GaAs-AlGaAs; III-V semiconductors; NDR region; cut-off frequency; double-barrier resonant tunnel diodes; equivalent circuit; self-resonant frequency; semiconductor devices; small signal impedance; tunnel diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900977
