Title :
LPE Growth and Scintillation Properties of (Zn,Mg)O Single Crystalline Film
Author :
Yoshikawa, Akira ; Yanagida, Takayuki ; Fujimoto, Yutaka ; Kurosawa, Shunsuke ; Yokota, Yuui ; Yamaji, Akihiro ; Sugiyama, Makoto ; Wakahara, Shingo ; Futami, Yoshisuke ; Kikuchi, Masae ; Miyamoto, Miyuki ; Sekiwa, Hideyuki ; Nikl, Martin
Author_Institution :
Inst. for Mater. Res. (IMR), Tohoku Univ., Sendai, Japan
Abstract :
Among the direct wide band-gap semiconductors, ZnO is an attractive scintillator for alpha particle monitoring. However, the undoped ZnO has a dominant slow luminescence around 500-600 nm due to lattice defects. In this study, the Mg-substituted ZnO ((Zn,Mg)O) single crystalline films with high crystallinity are investigated. Mg doping is found to improve the lattice order and suppress slow luminescent component around 500-600 nm. (Zn,Mg)O single crystalline films were grown by the Liquid Phase Epitaxy (LPE) method. Alpha-ray excited radioluminescence spectra of (Zn,Mg)O film show only one emission peak around 400 nm and decay time of a few nanoseconds. This emission is assigned to free exciton. Light yield of LPE grown (Zn,Mg)O film is evaluated of about 90% of BGO.
Keywords :
II-VI semiconductors; liquid phase epitaxial growth; magnesium; photoluminescence; scintillation; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; zinc compounds; LPE; ZnO:Mg; alpha particle monitoring; alpha-ray excited radioluminescence spectra; crystallinity; direct wide band-gap semiconductors; doping; lattice defects; lattice order; liquid phase epitaxial growth; luminescence; scintillation properties; scintillator; single crystalline film; wavelength 500 nm to 600 nm; Doping; Epitaxial growth; Epitaxial layers; Luminescence; Photonic band gap; Substrates; Zinc oxide; Crystalline materials; epitaxial layers; liquid phase epitaxy; scintillator; semiconductor films;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2194743
