DocumentCode
1539636
Title
Effects of crystallinity and electron mean-free-path on dielectric strength of low-density polyethylene
Author
Tanaka, Yasuhiro ; Ohnuma, Norihiro ; Katsunami, Kunio ; Ohki, Yoshimichi
Author_Institution
Dept. of Electr. Eng., Waseda Univ., Tokyo, Japan
Volume
26
Issue
2
fYear
1991
fDate
4/1/1991 12:00:00 AM
Firstpage
258
Lastpage
265
Abstract
The relation between crystallinity and the mean free path of high-energy electrons in low-density polyethylene and their effects on dielectric strength was studied. Thin LDPE films obtained by vacuum evaporation were annealed at temperatures between room temperature and 100°C. Crystallinity was measured by X-ray diffraction. Electrons were injected into the film by photo-emission and the energy of electrons emitted into vacuum through the film was analyzed to obtain their energy distribution. The mean free path was then calculated from the energy distribution. It was found that the crystallinity increases and the mean free path becomes longer as the annealing temperature increases. Dielectric strength was measured by applying an impulse voltage of 1.2/50 μs at room temperature and -50°C. It was found that the breakdown field decreases with an increase in annealing temperature at both measurement temperatures. Thus, increases crystallinity makes electron transport easier and the mean-free path longer, resulting in a lower dielectric strength
Keywords
X-ray diffraction examination of materials; carrier mean free path; electric strength; organic insulating materials; polymer films; LDPE films; X-ray diffraction; annealing; annealing temperature; breakdown field; crystallinity; dielectric strength; electron mean-free-path; energy distribution; low-density polyethylene; photo-emission; vacuum evaporation; Annealing; Crystallization; Dielectric breakdown; Dielectric measurements; Dielectric thin films; Electron emission; Elementary particle vacuum; Polyethylene; Temperature measurement; X-ray diffraction;
fLanguage
English
Journal_Title
Electrical Insulation, IEEE Transactions on
Publisher
ieee
ISSN
0018-9367
Type
jour
DOI
10.1109/14.78326
Filename
78326
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