Title :
Programmable On-Chip ESD Protection Using Nanocrystal Dots Mechanism and Structures
Author :
Shi, Zitao ; Wang, Xin ; Liu, Jian ; Lin, Lin ; Zhao, Hui ; Fang, Qiang ; Wang, Li ; Zhang, Chen ; Fan, Siqiang ; Tang, He ; Li, Bei ; Wang, Albert ; Liu, Jianlin ; Cheng, Yuhua
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA
Abstract :
This paper reports a new nanocrystal quantum-dot (NC-QD)-based tunable on-chip electrostatic discharge (ESD) protection mechanism and structures. Experiments validated the programmable ESD protection concept. Prototype structures achieved an adjustable ESD triggering voltage range of 2.5 V, very fast response to ESD transients of rising time tr ~ 100 ps and pulse duration td; ~ ns, ESD protection density of 25 mA/μm in human body model and 400 mA/μm in charged device model equivalent stressing, and a very low leakage current of Ileak ~ 15 pA. The NC-QD ESD protection concept can potentially be used to design field-programmable on-chip ESD protection circuitry for mixed-signal ICs in nanoscales.
Keywords :
electrostatic discharge; mixed analogue-digital integrated circuits; semiconductor quantum dots; NC-QD ESD protection concept; adjustable ESD triggering voltage range; charged device model equivalent stressing; field-programmable on-chip ESD protection circuitry design; mixed-signal IC; nanocrystal quantum-dot; nanoscale; tunable on-chip electrostatic discharge protection mechanism; voltage 2.5 V; Crystals; Electrostatic discharges; Logic gates; MOSFET circuits; Programming; System-on-a-chip; ESD protection; Electrostatic discharge (ESD); nanocrystal quantum dot (NC-QD); tunable;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2012.2204767