Title :
Optically-coupled mirror-quantum well InGaAs-GaAs light emitting diode
Author :
Deppe, D.G. ; Campbell, J.C. ; Kuchibhotla, R. ; Rogers, T.J. ; Streetman, B.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
Data are presented showing that it is possible to optically couple a semiconductor quantum well to a mirror, and thus influence its spontaneous emission lifetime, for mirror to quantum well spacings of less than an optical wavelength. Light emitting diodes with various mirror to quantum well spacings corresponding to quantum well placement at either interference nodes or antinodes are characterised in terms of light output efficiency and frequency response.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; semiconductor quantum wells; InGaAs-GaAs light emitting diode; frequency response; interference antinodes; interference nodes; light output efficiency; mirror to quantum well spacings; optically coupled mirror quantum wells; quantum well placement; semiconductors; spontaneous emission lifetime;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901066
