DocumentCode
1539963
Title
Optically-coupled mirror-quantum well InGaAs-GaAs light emitting diode
Author
Deppe, D.G. ; Campbell, J.C. ; Kuchibhotla, R. ; Rogers, T.J. ; Streetman, B.G.
Author_Institution
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Volume
26
Issue
20
fYear
1990
Firstpage
1665
Lastpage
1666
Abstract
Data are presented showing that it is possible to optically couple a semiconductor quantum well to a mirror, and thus influence its spontaneous emission lifetime, for mirror to quantum well spacings of less than an optical wavelength. Light emitting diodes with various mirror to quantum well spacings corresponding to quantum well placement at either interference nodes or antinodes are characterised in terms of light output efficiency and frequency response.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; semiconductor quantum wells; InGaAs-GaAs light emitting diode; frequency response; interference antinodes; interference nodes; light output efficiency; mirror to quantum well spacings; optically coupled mirror quantum wells; quantum well placement; semiconductors; spontaneous emission lifetime;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901066
Filename
58168
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