Title :
Room temperature continuous wave operation of GaInP/AlInP visible-light laser with GaInP/AlInP superlattice confinement layer grown by gas source molecular beam epitaxy
Author :
Kikuchi, A. ; Kaneko, Yuya ; Nomura, I. ; Kishino, Katsumi
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
Abstract :
A remarkable threshold current density reduction (from 3.5 kA/cm2 to 1.6 kA/cm2) of GaInP/AlInP visible light lasers grown by gas source molecular beam epitaxy (GS-MBE) was obtained by introducing 50 pairs of GaInP(7.1 AA)/AlInP(7.1 AA) short period superlattice confinement (SLC) layers. As a result, the room temperature continuous wave (CW) operation was obtained at 669 nm with a minimum threshold current of 50 mA and maximum light output of 10.5 mW.
Keywords :
III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium compounds; indium compounds; semiconductor junction lasers; semiconductor superlattices; 10.5 mW; 30 C; 50 mA; 669 nm; 7.1 A; GS-MBE; GaInP-AlInP; SLC; gas source molecular beam epitaxy; maximum light output; room temperature CW operation; semiconductors; superlattice confinement layer; threshold current; threshold current density reduction; visible-light laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901068
