DocumentCode
1540002
Title
Broadband tuning (170 nm) of InGaAs quantum well lasers
Author
Eng, L.E. ; Mehuys, D.G. ; Mittelstein, M. ; Yariv, Amnon
Author_Institution
Dept. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA
Volume
26
Issue
20
fYear
1990
Firstpage
1675
Lastpage
1677
Abstract
The wavelength tuning properties of strained InGaAs quantum well lasers using an external grating for feedback is reported. Tunable laser oscillation has been observed over a range of 170 nm, between 840 and 1010 nm, under pulsed current excitation. The optimal conditions for broadband tunability for the InGaAs lasers are different from GaAs lasers, which is attributed to a difference in spectral gain curves. Together with an optimised GaAs quantum well laser the entire region between 740 and 1010 nm is spanned.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser tuning; semiconductor junction lasers; 740 nm to 1010 nm; InGaAs quantum well lasers; broadband tunability; external grating; feedback; pulsed current excitation; spectral gain;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901072
Filename
58174
Link To Document