Title :
Broadband tuning (170 nm) of InGaAs quantum well lasers
Author :
Eng, L.E. ; Mehuys, D.G. ; Mittelstein, M. ; Yariv, Amnon
Author_Institution :
Dept. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA
Abstract :
The wavelength tuning properties of strained InGaAs quantum well lasers using an external grating for feedback is reported. Tunable laser oscillation has been observed over a range of 170 nm, between 840 and 1010 nm, under pulsed current excitation. The optimal conditions for broadband tunability for the InGaAs lasers are different from GaAs lasers, which is attributed to a difference in spectral gain curves. Together with an optimised GaAs quantum well laser the entire region between 740 and 1010 nm is spanned.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser tuning; semiconductor junction lasers; 740 nm to 1010 nm; InGaAs quantum well lasers; broadband tunability; external grating; feedback; pulsed current excitation; spectral gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901072
