Title :
Matrix-addressed 4*4 spatial light modulator using the quantum confined Stark effect in GaAs/AlGaAs quantum wells
Author :
McIlvaney, K. ; Marsh, John H. ; Roberts, Jeffrey S. ; Button, C.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
The operation of a matrix-addressed GaAs quantum well modulator utilising the quantum confined Stark effect is described. The performance of the array was determined by limitations imposed by the electrical circuit and by the uniformity of the quantum well material. Individual modulators gave a modulation depth of 8.9 dB at the optimum working wavelength of 837 nm. In an array configuration the modulation depth dropped to 6.2 dB at 838.1 nm.
Keywords :
III-V semiconductors; Stark effect; aluminium compounds; electro-optical devices; gallium arsenide; matrix algebra; optical modulation; optical waveguide components; semiconductor devices; semiconductor quantum wells; 837 nm; 838.1 nm; GaAs-AlGaAs; array configuration; array performance; electrical circuit; matrix-addressed GaAs quantum well modulator; modulation depth; optimum working wavelength; quantum confined Stark effect; spatial light modulator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901081
