DocumentCode
1540072
Title
Demonstration of digital pulse modulation of a grating-surface-emitting diode laser
Author
Carlson, N.W. ; Stabile, P.J. ; Liew, S.K. ; Bour, D.P. ; Evans, G.A.
Author_Institution
David Sarnoff Res. Center, Princeton, NJ, USA
Volume
26
Issue
20
fYear
1990
Firstpage
1695
Lastpage
1696
Abstract
Digital pulse modulation at 1.2 Gbits/s using grating-surface emitting (GSE) lasers is demonstrated. Good pulse fidelity was observed. Measurements of the RF characteristics and relaxation oscillation frequency of the GSE laser show that the present limitation to achieving higher modulation rates is the parasitic capacitance caused by the large bonding pads.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; optical communication equipment; optical modulation; pulse modulation; semiconductor epitaxial layers; semiconductor junction lasers; vapour phase epitaxial growth; 1.2 Gbit/s; AlGaAs; RF characteristics; digital pulse modulation; grating-surface-emitting diode laser; higher modulation rates; large bonding pads; parasitic capacitance; pulse fidelity; relaxation oscillation frequency;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901083
Filename
58185
Link To Document