Title :
Demonstration of digital pulse modulation of a grating-surface-emitting diode laser
Author :
Carlson, N.W. ; Stabile, P.J. ; Liew, S.K. ; Bour, D.P. ; Evans, G.A.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
Abstract :
Digital pulse modulation at 1.2 Gbits/s using grating-surface emitting (GSE) lasers is demonstrated. Good pulse fidelity was observed. Measurements of the RF characteristics and relaxation oscillation frequency of the GSE laser show that the present limitation to achieving higher modulation rates is the parasitic capacitance caused by the large bonding pads.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical communication equipment; optical modulation; pulse modulation; semiconductor epitaxial layers; semiconductor junction lasers; vapour phase epitaxial growth; 1.2 Gbit/s; AlGaAs; RF characteristics; digital pulse modulation; grating-surface-emitting diode laser; higher modulation rates; large bonding pads; parasitic capacitance; pulse fidelity; relaxation oscillation frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901083
