DocumentCode :
1540244
Title :
PbS/PbSrS multi-quantum well laser emitting in the mid-infrared wavelength region
Author :
Takahashi, S. ; Koguchi, N. ; Chikyow, T. ; Kiyosawa, T. ; Fujiwara, J. ; Yoshihara, K.
Author_Institution :
Nat. Res. Inst. for Metals, Ibaraki, Japan
Volume :
26
Issue :
20
fYear :
1990
Firstpage :
1715
Lastpage :
1716
Abstract :
A multi-quantum well laser composed of PbS wells separated by Pb0.94Sr0.06S barriers was made by MBE on PbS substrates. Lasing action was confirmed at 15-135 K, where the emission wavelength was 3.6-3.1 mu m.
Keywords :
IV-VI semiconductors; lead compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; strontium compounds; 15 to 135 K; 3.1 to 3.6 micron; IV-VI semiconductors; MBE; PbS; PbS-Pb 1-xSr xS; emission wavelength; lasing action; mid-infrared wavelength region; multi-quantum well laser;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19901095
Filename :
58197
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1540244
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