• DocumentCode
    1540434
  • Title

    Modelling polarisation of ferroelectric SBT capacitors including temperature dependence

  • Author

    Schultz, I. ; Goebel, H. ; Ullmann, M.

  • Author_Institution
    Inst. for Electron., Fed. Armed Forces Univ., Hamburg, Germany
  • Volume
    37
  • Issue
    20
  • fYear
    2001
  • fDate
    9/27/2001 12:00:00 AM
  • Firstpage
    1216
  • Lastpage
    1217
  • Abstract
    A new model for thin film SBT ferroelectric capacitors including temperature behaviour is presented. The model, which is based on the Preisach theory, requires parameters that are physically based and which can be easily extracted from measured data. Iterative procedures are not used in the model, which makes it best suited for use in circuit simulators
  • Keywords
    bismuth compounds; dielectric hysteresis; ferroelectric capacitors; strontium compounds; tantalum compounds; Preisach theory; SrBi2Ta2O9; circuit simulators; ferroelectric SBT capacitors; ferroelectric memories; polarisation; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010829
  • Filename
    956664
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1540434