DocumentCode :
1540434
Title :
Modelling polarisation of ferroelectric SBT capacitors including temperature dependence
Author :
Schultz, I. ; Goebel, H. ; Ullmann, M.
Author_Institution :
Inst. for Electron., Fed. Armed Forces Univ., Hamburg, Germany
Volume :
37
Issue :
20
fYear :
2001
fDate :
9/27/2001 12:00:00 AM
Firstpage :
1216
Lastpage :
1217
Abstract :
A new model for thin film SBT ferroelectric capacitors including temperature behaviour is presented. The model, which is based on the Preisach theory, requires parameters that are physically based and which can be easily extracted from measured data. Iterative procedures are not used in the model, which makes it best suited for use in circuit simulators
Keywords :
bismuth compounds; dielectric hysteresis; ferroelectric capacitors; strontium compounds; tantalum compounds; Preisach theory; SrBi2Ta2O9; circuit simulators; ferroelectric SBT capacitors; ferroelectric memories; polarisation; temperature dependence;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20010829
Filename :
956664
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1540434
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