DocumentCode
1540451
Title
High efficiency AlGaInP-based 650 nm vertical-cavity surface-emitting lasers
Author
Knigge, A. ; Zorn, M. ; Wenzel, H. ; Weyers, M. ; Tränkle, G.
Author_Institution
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
Volume
37
Issue
20
fYear
2001
fDate
9/27/2001 12:00:00 AM
Firstpage
1222
Lastpage
1223
Abstract
Record high continuous-wave output power of 3.1 mW and peak wall-plug efficiency of 14% at the wavelength of 650 nm have been achieved from oxide-confined AlGaInP-AlGaAs vertical-cavity surface-emitting lasers. At a wavelength of 657 nm laser emission is detected up to 60°C
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser cavity resonators; laser transitions; semiconductor lasers; surface emitting lasers; 14 percent; 3.1 mW; 60 C; 650 nm; 657 nm; AlGaInP-AlGaAs; AlGaInP-based VCSEL; continuous-wave output power; high efficiency semiconductor lasers; oxide-confined AlGaInP/AlGaAs VCSEL; peak wall-plug efficiency; surface-emitting lasers; vertical-cavity SEL;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20010831
Filename
956668
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