Title :
High frequency characteristics of InAs/GaInAs quantum dot distributed feedback lasers emitting at 1.3 μm
Author :
Krebs, R. ; Klopf, F. ; Rennon, S. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Technische Phys., Wurzburg Univ., Germany
fDate :
9/27/2001 12:00:00 AM
Abstract :
The high frequency properties of InAs/GaInAs quantum dot distributed feedback (DFB) lasers emitting at 1.3 μm have been examined. The lasers display a small static linewidth of 1.3 MHz and a chirp as low as 83 MHz/mA. More than 5 GHz small-signal modulation bandwidth was observed in the first devices indicating the potential for high-speed operation of quantum dot lasers
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser transitions; optical communication equipment; optical modulation; quantum well lasers; semiconductor quantum dots; spectral line breadth; 1.3 micron; 5 GHz; HF characteristics; InAs-GaInAs; InAs/GaInAs quantum dot DFB lasers; high frequency characteristics; high-speed operation; low chirp; quantum dot distributed feedback lasers; small-signal modulation bandwidth; static linewidth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010841
