DocumentCode :
1540550
Title :
High performance superlattice coupled quantum well infrared photodetector for long wavelength infrared detection
Author :
Moon, Junhee ; Li, Sheng S. ; Lee, Jung Hee
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Volume :
37
Issue :
20
fYear :
2001
fDate :
9/27/2001 12:00:00 AM
Firstpage :
1249
Lastpage :
1250
Abstract :
A high performance InGaAs/GaAs/AlGaAs superlattice coupled (SC) quantum well infrared photodetector (QWIP) grown on GaAs has been developed for long wavelength infrared detection. The dark I-V and spectral response were measured and analysed on this device. Excellent responsivity and detectivity were obtained for this SC-QWIP. The peak detectivity (D*) and collection quantum efficiency (ηg) under background limited performance (BLIP) condition were found to be D*BLIP=8.36×1010 cm-Hz1/2/W and ηg=18.8% at λp=10.5 μm, Vh=2.5 V, and T=20 K
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; photodetectors; quantum well devices; semiconductor superlattices; 10.5 micron; 18.8 percent; 2.5 V; 20 K; InGaAs-GaAs-AlGaAs; InGaAs/GaAs/AlGaAs superlattice coupled quantum well infrared photodetector; background limited performance; collection quantum efficiency; dark I-V characteristics; detectivity; long wavelength infrared detection; responsivity; spectral response;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20010826
Filename :
956686
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1540550
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