DocumentCode :
1540586
Title :
High-speed AlGaAs/GaAs HBTs with reduced base-collector capacitance
Author :
Kim, Woonyun ; Lee, Kyungho ; Chung, Minchul ; Kang, Jongchan ; Kim, Bumman
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., South Korea
Volume :
37
Issue :
20
fYear :
2001
fDate :
9/27/2001 12:00:00 AM
Firstpage :
1259
Lastpage :
1261
Abstract :
A new layout for high-speed AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is presented. The layout is horseshoe shaped and designed to simultaneously reduce base resistance (RB) and base-collector capacitance (CBC). A horseshoe-shaped HBT and a conventional single-finger HBT with the same emitter width of 2 μm were fabricated and tested. The reduction of RB and CBC using the horseshoe-shaped HBT resulted in a 25% improvement of the maximum oscillation frequency (fmax=130 GHz)
Keywords :
III-V semiconductors; aluminium compounds; capacitance; gallium arsenide; heterojunction bipolar transistors; millimetre wave bipolar transistors; 130 GHz; 2 micron; AlGaAs-GaAs; AlGaAs/GaAs HBTs; HBT layout; base resistance reduction; base-collector capacitance reduction; heterojunction bipolar transistors; high-speed HBTs; horseshoe shaped layout; maximum oscillation frequency;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20010835
Filename :
956693
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1540586
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