• DocumentCode
    1540596
  • Title

    InGaP/GaAs power heterostructure-emitter bipolar transistor

  • Author

    Yan, B.P. ; Yang, E.S. ; Yang, Y.F. ; Wang, X.Q. ; Hsu, C.C.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
  • Volume
    37
  • Issue
    20
  • fYear
    2001
  • fDate
    9/27/2001 12:00:00 AM
  • Firstpage
    1262
  • Lastpage
    1264
  • Abstract
    The first microwave large-signal power results measured from InGaP/GaAs heterostructure-emitter bipolar transistors (HEBT) are reported. A continuous wave output power of 0.25 W with power added efficiency of 63.5%, at 1.9 GHz has been achieved from a 26-finger HEBT with total emitter area of 873.6 μm2. The experimental results demonstrate the excellent power performance and capability of HEBTs
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; power bipolar transistors; 0.25 W; 1.9 GHz; 26-finger HEBT; 63.5 percent; InGaP-GaAs; InGaP/GaAs power bipolar transistor; microwave large-signal power results; power added efficiency; power heterostructure-emitter bipolar transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010840
  • Filename
    956695
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1540596