• DocumentCode
    1540601
  • Title

    Injection-locking and power combining with double barrier resonant tunnelling diodes

  • Author

    Cantu, H.I. ; Truscott, W.S.

  • Author_Institution
    Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
  • Volume
    37
  • Issue
    20
  • fYear
    2001
  • fDate
    9/27/2001 12:00:00 AM
  • Firstpage
    1264
  • Lastpage
    1265
  • Abstract
    Injection-locked oscillations at 8.5 and 11.3 GHz are reported in structures with four GaAs-AlAs double barrier resonant tunnelling diodes bridging a coplanar line. Their outputs add to the observed -8 dBm. More devices within a smaller geometry could generate 0 dBm up to several hundred gigahertz
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; injection locked oscillators; microwave diodes; microwave oscillators; power combiners; resonant tunnelling diodes; 11.3 GHz; 8.5 GHz; GaAs-AlAs; GaAs/AlAs DBRTD; SHF oscillations; coplanar line; double barrier RTDs; injection-locking; power combining; resonant tunnelling diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010834
  • Filename
    956696
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1540601