Title :
Injection-locking and power combining with double barrier resonant tunnelling diodes
Author :
Cantu, H.I. ; Truscott, W.S.
Author_Institution :
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
fDate :
9/27/2001 12:00:00 AM
Abstract :
Injection-locked oscillations at 8.5 and 11.3 GHz are reported in structures with four GaAs-AlAs double barrier resonant tunnelling diodes bridging a coplanar line. Their outputs add to the observed -8 dBm. More devices within a smaller geometry could generate 0 dBm up to several hundred gigahertz
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; injection locked oscillators; microwave diodes; microwave oscillators; power combiners; resonant tunnelling diodes; 11.3 GHz; 8.5 GHz; GaAs-AlAs; GaAs/AlAs DBRTD; SHF oscillations; coplanar line; double barrier RTDs; injection-locking; power combining; resonant tunnelling diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010834
