Hot carrier effects in Si-SiGe HBTs

Author

Borgarino, Mattia ; Kuchenbecker, Jessica ; Tartarin, Jean-Guy ; Bary, Laurent ; Kovacic, T. ; Plana, Robert ; Fantini, Fausto ; Graffeuil, Jacques

Author_Institution

Dipt. di Sci dell´´Ingegneria, Modena Univ., Italy

Volume

1

Issue

2

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

86

Lastpage

94

Abstract

Life tests were performed at room temperature on Si-SiGe HBTs by reverse biasing the base-emitter junction under open collector conditions. The effects on the DC, the low-frequency noise, and the microwave characteristics were investigated both by the analysis of experimental data and by simulations and analytical models. The stress-induced surface damage close to the emitter perimeter was identified to be the degradation mechanism mainly responsible for the variations observed, in all the investigated parameters

Keywords

Ge-Si alloys; S-parameters; elemental semiconductors; equivalent circuits; heterojunction bipolar transistors; hot carriers; life testing; microwave bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor device reliability; semiconductor materials; silicon; DC characteristics; LF noise characteristics; S-parameters; Si-SiGe; Si-SiGe HBTs; analytical models; base-emitter junction; degradation mechanism; hot carrier effects; life tests; low-frequency noise; microwave characteristics; open collector conditions; reverse biasing; stress-induced surface damage; Analytical models; Heterojunction bipolar transistors; Hot carrier effects; Low-frequency noise; Low-noise amplifiers; Microwave devices; Performance evaluation; Probes; Stress; Testing;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/7298.956701

Filename

956701