Accurate wafer-level measurement of ESD protection device turn-on using a modified very fast transmission-line pulse system

Author

Juliano, Patrick A. ; Rosenbaum, Elyse

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

1

Issue

2

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

95

Lastpage

103

Abstract

Quantifying the turn-on behavior of electrostatic discharge (ESD) protection devices under subnanosecond transients is critical to achieving robust protection against the Charged Device Model stress. A wafer-level very fast transmission-line pulse system (VFTLP) has been developed and is shown to successfully measure the turn-on time of a common ESD protection device. Both formal analysis and practical details regarding VFTLP system construction and operation are documented

Keywords

calibration; electrostatic discharge; integrated circuit measurement; monolithic integrated circuits; overvoltage protection; time measurement; ESD protection device turn-on; charged device model stress; electrostatic discharge protection devices; modified very fast transmission-line pulse system; robust protection; subnanosecond transients; turn-on behavior; turn-on time measurement; wafer-level measurement; Calibration; Electrostatic discharge; Electrostatic measurements; Protection; Pulse measurements; Robustness; Stress; System testing; Transmission lines; Voltage;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/7298.956702

Filename

956702