Title :
Accurate wafer-level measurement of ESD protection device turn-on using a modified very fast transmission-line pulse system
Author :
Juliano, Patrick A. ; Rosenbaum, Elyse
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
6/1/2001 12:00:00 AM
Abstract :
Quantifying the turn-on behavior of electrostatic discharge (ESD) protection devices under subnanosecond transients is critical to achieving robust protection against the Charged Device Model stress. A wafer-level very fast transmission-line pulse system (VFTLP) has been developed and is shown to successfully measure the turn-on time of a common ESD protection device. Both formal analysis and practical details regarding VFTLP system construction and operation are documented
Keywords :
calibration; electrostatic discharge; integrated circuit measurement; monolithic integrated circuits; overvoltage protection; time measurement; ESD protection device turn-on; charged device model stress; electrostatic discharge protection devices; modified very fast transmission-line pulse system; robust protection; subnanosecond transients; turn-on behavior; turn-on time measurement; wafer-level measurement; Calibration; Electrostatic discharge; Electrostatic measurements; Protection; Pulse measurements; Robustness; Stress; System testing; Transmission lines; Voltage;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/7298.956702
