Title :
Multichannel and Wideband Power Amplifier Design Methodology for 4G Communication Systems Based on Hybrid Class-J Operation
Author :
Mimis, Konstantinos ; Morris, Kevin A. ; Bensmida, Souheil ; McGeehan, Joe P.
Author_Institution :
Centre for Commun. Res., Univ. of Bristol Bristol, Bristol, UK
Abstract :
A methodology for the design of multichannel, wideband, highly efficient hybrid Class-J power amplifiers for fourth-generation (4G) communication transmitters is proposed. The design procedure is based on the automatic generation and evaluation of a vast number of output matching networks of the same topology but different dimensions, with respect to efficiency, output power, and linearity. The approach can find application in the management of the efficiency/linearity/bandwidth tradeoff in amplifier design. In this paper, two matching network architectures have been considered. One multistubbed network and a stepped-impedance microstrip line network. The approach has been validated through the design, simulation, and measurement of two power amplifiers realized using the aforementioned procedure. The first amplifier covers 1.6-2.2 GHz (31.6% fractional bandwidth) with 55%-68% drain efficiency at the 2-dB compression point and worst case adjacent channel power ratio (ACRP) and error vector magnitude (EVM) of - 21.8 dBc and 8.35%, respectively, over the bandwidth. The second covers 0.5-1.8 GHz (113% fractional bandwidth) with 50%-69% drain efficiency at the 2-dB compression point and worst case ACRP of - 27.5 dBc and EVM of 4.22%. Both amplifiers are based on a commercial, packaged 10-W GaN HEMT transistor.
Keywords :
4G mobile communication; III-V semiconductors; UHF power amplifiers; gallium compounds; high electron mobility transistors; microstrip lines; radio transmitters; wide band gap semiconductors; wideband amplifiers; GaN; adjacent channel power ratio; automatic generation; bandwidth 0.5 GHz to 1.8 GHz; bandwidth 1.6 GHz to 2.2 GHz; error vector magnitude; fourth-generation communication transmitters; hybrid class-J power amplifiers; matching networks; multichannel power amplifier; multistubbed network; packaged GaN HEMT transistor; power 10 W; stepped-impedance microstrip line network; wideband power amplifier; Frequency conversion; Generators; Impedance; Linearity; Power generation; Wideband; Broadband; GaN; power amplifiers;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2012.2198489