Title :
Depth and width measurement simulation of semiconductor trench by optical wave irradiation
Author :
Shirasaki, Hirokimi
Author_Institution :
Tamagawa Univ., Machida, Japan
fDate :
3/1/1997 12:00:00 AM
Abstract :
The scattering properties by two dimensional Gaussian beam irradiation to a semiconductor square trench are analyzed by the boundary element method. Then, the scattering properties depending on differences of polarization of light, the permittivity and so on, and the limit of the trench width and depth measurements are investigated numerically
Keywords :
boundary-elements methods; interference spectroscopy; light polarisation; light scattering; permittivity; semiconductor process modelling; spatial variables measurement; spectroscopy; boundary element method; delay properties; depth measurement simulation; interference spectroscopy; light polarization; optical wave irradiation; permittivity; scattering properties; semiconductor square trench; semiconductor trench; trench width limit; two dimensional Gaussian beam irradiation; width measurement simulation; Boundary conditions; Boundary element methods; Conductors; Dielectric substrates; Equations; Light scattering; Optical scattering; Permittivity measurement; Polarization; Wavelength measurement;
Journal_Title :
Magnetics, IEEE Transactions on
