Title :
Electrical parametric and reliability of 5×50um TSVs for 3D IC
Author :
Bhushan, Bharat ; Toh, Chin Hock ; Chan, Alvin ; Ow, Isaac ; Wong, Loke Yuen ; Barman, Arkajit Roy ; Sudheeran, Shalina ; Rao, Chethan ; Abdul, Wahab Mohammed ; Chew, Jason ; Vijayen, Jay ; Mahajan, Uday ; Ericson, David ; Kumar, Narendra ; Ramaswami, Ses
Author_Institution :
Silicon Syst. Group, Appl. Mater. Inc., Albany, NY, USA
Abstract :
We present electrical parametric and reliability of 5×50um through silicon vias (TSVs) for three dimensional integrated circuits (3D IC). Electrical parameters such as oxide breakdown voltage (VbdTSV), leakage current (IleakTSV), oxide capacitance (CoxTSV), dielectric constant (k), minimum capacitance (CminTSV), threshold voltage (Vth) and mobile oxide charges (Qm) of blind TSVs are analyzed. And, the reliability of TSVs is analyzed with thermal cycling between -55°C to 125°C with a dwell time of 10-15 minutes by following JEDEC standard No. 22-A104D.
Keywords :
capacitance; electric breakdown; integrated circuit reliability; leakage currents; permittivity; three-dimensional integrated circuits; 3D integrated circuit; JEDEC standard No. 22-A104D; TSV; dielectric constant; electrical parameter; integrated circuit reliability; leakage current; minimum capacitance; mobile oxide charge; oxide breakdown voltage; oxide capacitance; size 5 mum; size 50 mum; temperature -55 C to 125 C; thermal cycling; three-dimensional integrated circuit; threshold voltage; through silicon via; Capacitance; Leakage currents; Reliability; Silicon; Thermal analysis; Three-dimensional displays; Through-silicon vias;
Conference_Titel :
Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2014 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4799-5016-4
DOI :
10.1109/IITC.2014.6831835
