A 1/3-in 510(H)×492(V) CCD image sensor with mirror image function

Author

Hojo, Junichi ; Naito, Yasuhiko ; Mori, Hiroshi ; Foujikawa, K. ; Kato, Naoki ; Wakayama, Toshiaki ; Komatsu, Eiji ; Itasaka, Masatoshi

Author_Institution

Sony Corp., Kanagawa, Japan

Volume

38

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

954

Lastpage

959

Abstract

A 1/3-in optical format 510(H)×492(V) interline charge-coupled-device (CCD) image sensor with a mirror-image function has been developed. To realize both a normal image and a mirror image, the horizontal shift register (H-CCD) is transferred forward and backward by a four-electrode, quasi-two-phase clock drive. The unit cell size is 9.6(H)×7.5(V) μm². An on-chip microlens has been developed to achieve a sensitivity of 28 mV/lx, which is higher than that of the conventional 1/2-in device. The hole accumulation diode (HAD) sensor used has the advantage of low dark current, negligibly small lag, high blooming suppression, and a variable-speed electronic shutter. The smear reduction level is -83 dB. Horizontal resolution of 330 TV lines is obtained

Keywords

CCD image sensors; 0.333 in; 1/3-in format; 250920 pixel; 492 pixel; 510 pixel; 9.6 micron; CCD image sensor; high blooming suppression; hole accumulation diode; horizontal resolution; horizontal shift register; low dark current; mirror image function; normal image; on-chip microlens; quasi-two-phase clock drive; sensitivity; small lag; unit cell size; variable-speed electronic shutter; Charge coupled devices; Charge-coupled image sensors; Clocks; Diodes; Image sensors; Lenses; Microoptics; Mirrors; Optical sensors; Shift registers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.78364

Filename

78364