Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs

Author

Bangsaruntip, Sarunya ; Cohen, Guy M. ; Majumdar, Amlan ; Sleight, Jeffrey W.

Author_Institution

Res. Div., T.J. Watson Res. Center, IBM, Yorktown Heights, NY, USA

Volume

31

Issue

9

fYear

2010

Firstpage

903

Lastpage

905

Abstract

Experimental data from undoped-body gate-all-around (GAA) silicon nanowire (NW) MOSFETs with different sizes demonstrate the universality of short-channel effects as a function of L_EFF/λ, where L_EFF is the effective channel length and λ is the electrostatic scaling length. Data from undoped-body single-gate extremely thin SOI (ETSOI) devices additionally show that the universality of short-channel effects is valid for any undoped-body fully depleted SOI MOSFET. Our data indicate that L_EFF of undoped GAA NW MOSFETs can be scaled down by ~2.5 times compared with undoped single-gate ETSOI MOSFETs while maintaining equivalent short-channel control.

Keywords

MOSFET; elemental semiconductors; nanowires; silicon; silicon-on-insulator; Si; extremely thin SOI devices; gate-all-around silicon nanowire; short-channel effects; undoped-body silicon nanowire MOSFET; Annealing; Electrostatics; FETs; FinFETs; MOSFETs; Scalability; Scanning electron microscopy; Silicon; Thickness control; Transmission electron microscopy; Fully depleted SOI (FDSOI); MOSFETs; gate-all-around (GAA); short-channel effects; silicon nanowire (NW);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2052231

Filename

5512594