A low-noise line-amplified MOS imaging devices

Author

Ozaki, Toshifumi ; Kinugasa, Hajime ; Nishida, Takashi

Author_Institution

Hitachi Ltd., Tokyo, Japan

Volume

38

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

969

Lastpage

975

Abstract

A new MOS imaging device is proposed. It has an amplifier and a correlated double sampling (CDS) circuit at each vertical signal line and an off-chip smear differential gear. The 1/2-in image format, 500×485 pixels, is designed on 1.5-μm CMOS technology, and its fundamental characteristics are analyzed. Random noise is 120 pA, and the aperture ratio is greater than 70%. The smear level is 100 dB. The fixed pattern noise is 2000 pA in the dark, 0.62% in light. Some advantages of this device include a 5-V power supply requirement, a high saturation current, a high signal-to-random-noise ratio, and a low smear level. However, the fixed pattern noise in the dark needs to be lowered for improved performance

Keywords

CMOS integrated circuits; image sensors; 0.5 in; 1.5 micron; 1/2-in image format; 242500 pixel; 485 pixel; 5 V; 5-V power supply requirement; 500 pixel; CMOS technology; SNR; aperture ratio; correlated double sampling; fixed pattern noise; line-amplified MOS imaging devices; low smear level; off-chip smear differential gear; performance; saturation current; signal-to-random-noise ratio; smear level; Apertures; CMOS technology; Circuit noise; Differential amplifiers; Gears; Image analysis; Image sampling; Pixel; Power supplies; Signal to noise ratio;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.78367

Filename

78367