DC Characterizations of MQW Tunnel Diode and Laser Diode Hybrid Integration Device

Author

Niu, Bin ; Li, Yanping ; Hong, Tao ; Chen, Weixi ; Liang, Song ; Pan, Jiaoqing ; Qiu, Jifang ; Wang, Chong ; Ran, Guangzhao ; Zhao, Lingjuan ; Qin, Guogang ; Wang, Wei

Author_Institution

Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China

Volume

24

Issue

16

fYear

2012

Firstpage

1369

Lastpage

1371

Abstract

A multiple quantum well tunnel diode (TD) and laser diode (LD) hybrid integration device (TD-LD) was fabricated. Additional current supply was applied to adjust the LD´s operating point. DC characteristics were investigated in both voltage source and current source drive circuits at room temperature. Different results from the two drive circuits are discussed.

Keywords

integrated optoelectronics; optical fabrication; quantum well devices; semiconductor lasers; tunnel diodes; DC characterizations; LD operating point; MQW tunnel diode; TDLD; current source drive circuits; current supply; laser diode hybrid integration device; multiple quantum well tunnel diode; temperature 293 K to 298 K; voltage source drive circuits; Diode lasers; Doping; Indium phosphide; Quantum well devices; Semiconductor diodes; Semiconductor lasers; Temperature; DC characteristics; InP; drive circuit; microwave photonics; multiple-quantum-well tunnel diode (MQW TD); optical radio frequency (RF) generation; tunnel diode laser diode (TD-LD);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2203799

Filename

6218757