Light Output Extraction Enhancement in GaN-Based Green LEDs With Periodic AZO Subwavelength Nanostructure Arrays

Author

Joo, Dong Hyuk ; Lee, Hee Kwan ; Yu, Jae Su

Author_Institution

Dept. of Electron. & Radio Eng., Kyung Hee Univ., Yongin, South Korea

Volume

24

Issue

16

fYear

2012

Firstpage

1381

Lastpage

1383

Abstract

We experimentally and theoretically demonstrate the enhancement in the light extraction efficiency of InGaN/GaN multiple quantum well green light-emitting diodes (LEDs) through periodic aluminum-doped zinc oxide (AZO) subwavelength nanostructure arrays (SNAs). The AZO SNAs are formed on the surface of indium tin oxide electrodes of LEDs by laser interference lithography and a subsequent dry etching after AZO film deposition. For LEDs with AZO SNAs, the light output power is increased by 19% at 100 mA compared to the conventional LED on patterned sapphire substrate. Also, there is no distinct degradation in the electrical characteristics of LEDs.

Keywords

III-V semiconductors; aluminium; gallium compounds; laser materials processing; light emitting diodes; light interference; nanolithography; nanostructured materials; semiconductor quantum wells; wide band gap semiconductors; zinc compounds; AZO SNA; AZO film deposition; AZO subwavelength; Al₂O₃; ITO; InGaN-GaN; InGaN-GaN multiple quantum well; ZnO:Al; aluminum-doped zinc oxide subwavelength nanostructure arrays; conventional LED; current 100 mA; dry etching; electrical characteristics; gan-based green LEDs; green light-emitting diodes; indium tin oxide electrode surface; laser interference lithography; light extraction efficiency enhancement; light output extraction enhancement; patterned sapphire substrate; Gallium nitride; Indium tin oxide; Light emitting diodes; Lithography; Quantum well devices; Refractive index; Substrates; Aluminum-doped zinc oxides (AZO); GaN-based green light-emitting diodes (LEDs); laser interference lithography; light extraction; subwavelength nanostructure arrays (SNAs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2204869

Filename

6218761